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Proceedings Paper

Parametric Analysis Of Galnas Devices For Mm-Wave Applications
Author(s): A. R. Jha
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Paper Abstract

Metal-Insulator-Semiconductor FETs (MISFETs) when fabricated from GalnAs semiconductor material offer significant performance improvement at mm-wave frequencies. Higher electron velocity, power-added efficiency, device stability, transconductance and resistance to ionizing radiation are the outstanding features of these devices. Significant improvements in gain-bandwidth product, AM/PM performance, and third-order intermodulation distortion make GalnAs devices attractive for communication and radar equipment.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978305
Show Author Affiliations
A. R. Jha, Jha Technical Consulting Services (United States)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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