The quantum well injection transit time (QWITT) diode is a transit time device that couples a heterojunction barrier structure as an injector with a depleted epitaxial drift region, as shown in Figure 1. The device, which was originally proposed by Kesan et al. [1], is a promising solid state source with potential for operation at the higher millimeter wave frequencies. Both large and small signal analyses of the device have shown that the specific negative resistance due to transit time effects from the drift region are on the order of, or are significantly greater than, the intrinsic negative differential negative resistance of the quantum well double barrier diode. This paper presents results of a large signal simulation which uses a full set of semiconductor time dependent transport equations, and solves self-consistently for the electric field as well as for the electron and hole populations throughout the device.

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978302

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)