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Proceedings Paper

Magneto-Transport Characterization Of E-Beam-Induced Damage In GaAs-AlGaAs Heterostructures
Author(s): Tobin Fink; Doran D. Smith; W. D. Braddock
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Paper Abstract

The effect of electron irradiation as a function of energy on the 2D EG transport properties of high electron mobility transistor (HEMT) structures at liquid helium temperature was measured. High mobility HEMT structures were molecular beam epitaxy (MBE) grown with a 2D EG channel approximately 850 A below the surface. A Cambridge EBMF 10.5 was used for electron irradiation with electron energies between 2.5 and 20 keV. The HEMT structures were fabricated into Hall bar geometry. Damage is assessed by changes in the 2D EG concentrations, as determined from Shubnikov-de Haas (SdH) oscillations in a magnetic field from 0 to 8.5 Telsa, and changes in the zero field Hall mobilities. For electron energies from 5.0 to 12.5 keV, the electron dose produced a degradation of the Hall mobility. No -damage effect was observed for electron energies at 2.5 keV and 15 keV and above. This result could be attributed to the penetration depth and damage distribution. Electron damage introduced parallel conduction which was exhibited in the magnetoresistance curves. The results of this work will be useful in reducing damage from electron beam proCessing of submicron devices.

Paper Details

Date Published: 30 January 1990
PDF: 6 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978066
Show Author Affiliations
Tobin Fink, New Jersey Institute of Technology (United States)
Doran D. Smith, U. S. Army Electronics Technology and Devices Laboratory (United States)
W. D. Braddock, Cornell University (United States)

Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)

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