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Proceedings Paper

CMOS DRAM Alpha-Particle Effects
Author(s): Richard R. Zito
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Paper Abstract

The relative bit error rate (BER) induced in complementary metal oxide semiconductor (CMOS) dynamic random access memory (DRAM) by alpha particles and other types of radiation has been measured using an accelerator technique. It has been found that the variation of the BER with memory density is not as strong as expected. Furthermore, BER measurements as a function of incident particle charge show that protons may yield a nonnegligible BER, possibly making cosmic ray effects more important than expected. Finally, the occurrence of rare alpha-particle-induced hard errors is reported.

Paper Details

Date Published: 30 January 1990
PDF: 5 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978054
Show Author Affiliations
Richard R. Zito, Richard R. Zito R & D Corp. (United States)

Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)

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