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Proceedings Paper

Dry Etching Of Niobium Oxyde Thin Films
Author(s): A. C. Seabra; P. Verdonck; W. L. Xavier; V. Baranauskas
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Paper Abstract

The rate of etching of Nb oxydes in plasmas of CF4-O2 and CF4-H2 gas mixtures has been investigated. The etch curves of the oxydes thermally grown at different temperatures ( 673 K - 1023 K ) and times ( 10 - 45 min ) show similar behavior as these of pure Nb films, but with etch rates a factor of 2-3 higher. Fluorine radicals seem to be the main reactants in the etch chemistry. The etching is anisotropic and the end-point detection can be accurately made by "in situ" laser interferometry.

Paper Details

Date Published: 30 January 1990
PDF: 6 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978048
Show Author Affiliations
A. C. Seabra, EPUSP (Brazil)
P. Verdonck, EPUSP (Brazil)
W. L. Xavier, State University of Campinas (Brazil)
V. Baranauskas, State University of Campinas (Brazil)

Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)

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