Proceedings Paper
Magnetron-Enhanced Etching Of Photoresist For Sub-Micron Patterning| Format | Member Price | Non-Member Price |
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Paper Abstract
Design rules for the next generation of VLSI and ULSI devices will routinely require the plasma etching of sub-micron geometries. These requirements will create even greater challenges for the exposure and devolopment of photoresist on reflective and severe topographies. Two processes developed to meet these challenges are Multi-Level Resist processing and the Dry Development of Photoresist. Critical to both of these processes is the need for a productive, >4000A/min, anisotropic etch of photoresist with critical dimension loss of <0.05um.
Paper Details
Date Published: 30 January 1990
PDF: 15 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978046
Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)
PDF: 15 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978046
Show Author Affiliations
A. Selino, Materials Research Corp. (United States)
M. Siegel, Materials Research Corp. (United States)
M. Siegel, Materials Research Corp. (United States)
R. Lombaerts, UCB Electronics (Belgium)
Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)
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