Proceedings Paper
Laser induced damage threshold and optical properties of TiO[sub]2[/sub] and Al[sub]2[/sub]O[sub]3[/sub] coatings prepared by atomic layer deposition| Format | Member Price | Non-Member Price |
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Paper Abstract
Atomic Layer Deposition (ALD) allows for the deposition of homogeneous and conformal coatings with superior
microstructural properties and well controllable thickness. As a consequence, ALD-processes have moved into the focus
of optical thin film research during the last decade. In contrast to this, only a relatively small number of investigations in
the power handling capability of ALD-coatings have been reported until now. The present contribution summarizes
results of a study dedicated to the optical properties of single layers and high reflecting coating systems of TiO2 and
Al2O3 deposited by ALD. Besides Laser Induced Damage Threshold (LIDT) values, the spectral characteristics as well
the absorption and scatter losses are discussed.
Paper Details
Date Published: 4 December 2012
PDF: 8 pages
Proc. SPIE 8530, Laser-Induced Damage in Optical Materials: 2012, 853010 (4 December 2012); doi: 10.1117/12.976859
Published in SPIE Proceedings Vol. 8530:
Laser-Induced Damage in Optical Materials: 2012
Gregory J. Exarhos; Vitaly E. Gruzdev; Joseph A. Menapace; Detlev Ristau; M J Soileau, Editor(s)
PDF: 8 pages
Proc. SPIE 8530, Laser-Induced Damage in Optical Materials: 2012, 853010 (4 December 2012); doi: 10.1117/12.976859
Show Author Affiliations
Lars O. Jensen, Laser Zentrum Hannover e.V. (Germany)
Heinrich Mädebach, Laser Zentrum Hannover e.V. (Germany)
Jarmo Maula, Beneq Oy (Finland)
Heinrich Mädebach, Laser Zentrum Hannover e.V. (Germany)
Jarmo Maula, Beneq Oy (Finland)
Karlheinz Gürtler, Surace and Thin Film Consulting (Germany)
Detlev Ristau, Laser Zentrum Hannover e.V. (Germany)
Detlev Ristau, Laser Zentrum Hannover e.V. (Germany)
Published in SPIE Proceedings Vol. 8530:
Laser-Induced Damage in Optical Materials: 2012
Gregory J. Exarhos; Vitaly E. Gruzdev; Joseph A. Menapace; Detlev Ristau; M J Soileau, Editor(s)
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