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Proceedings Paper

The Influence Of In On The Performance Of (Al)GaAs Single Quantum Well Lasers
Author(s): R G Waters; C M Harding; B A Soltz; P K York; J N Baillargeon; J J Coleman; S E Fischer; D Fekete; J M Ballantyne
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Paper Abstract

Strained-layer InxGa1-x As quantum well lasers have attracted considerable attention of late due to the materials configurations made possible. Interest in the semiconductor laser community stems in part from the prospect of accessing the spectral window near 1 um for pumping new solid state hosts and in part for space communications if an advantage can be demonstrated. Technologists in these areas have fostered the hope that strain accommodation and perhaps lattice hardening 2-4 by In can enable viable long-lived devices. Steady progress in the development of high-performance Inx Ga 1-x As lasers 5-11 has been encouraging with the first cw life-test reports coming quite recently.'" Among other recent advances we cite achievement of high-power, low-threshold buried heterostructure devices operating near 1.1 We will be presenting recent progress in performance and reliability of (In)GaAs lasers of three very different types. First we will discuss devices emitting near 1 pm with demonstrated cw lifetimes exceeding 5000 hours. Next we turn our attention to two extreme cases. The first structure utilizes low levels (2.5%) of In in the quantum well of an otherwise conventional (A1)GaAs graded-index separate confinement heterostructure single quantum well (GRINSCH-SQW) laser and thus constitutes a small perturbation on a familiar device. Finally, a step-index structure with a In 0.51 Ga 0.49 As quantum well will be discussed.

Paper Details

Date Published: 22 June 1989
PDF: 8 pages
Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976386
Show Author Affiliations
R G Waters, McDonnell Douglas Astronautics Co (United States)
C M Harding, McDonnell Douglas Astronautics Co (United States)
B A Soltz, McDonnell Douglas Astronautics Co (United States)
P K York, University of Illinois at Urbana-Champaign (United States)
J N Baillargeon, University of Illinois at Urbana-Champaign (United States)
J J Coleman, University of Illinois at Urbana-Champaign (United States)
S E Fischer, Cornell University (United States)
D Fekete, Cornell University (United States)
J M Ballantyne, Cornell University (United States)

Published in SPIE Proceedings Vol. 1043:
Laser Diode Technology and Applications
Luis Figueroa, Editor(s)

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