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Proceedings Paper

Monolithic Four-Beam Semiconductor Laser Array With Built-In Monitoring Photodiodes
Author(s): T. Yamaguchi; K. Yodoshi; K. Minakuchi; Y. Inoue; N. Tabuchi; K. Komeda; H. Hamada; T. Niina
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Paper Abstract

A four-beam semiconductor laser was developed in which a monolithic array of four individually addressable GaAlAs high power lasers and four integrated Si photodiodes for monitoring the light output power of laser beams are housed in a single package. The main specifications are as follows; output power per beam, 40 mW; wavelength, 830 nm; and monitoring current at 30 mW, 100~200 Thermal analysis by numerical simulation was carried out and compared to experimental values observed during simultaneous operation of the multiple elemental lasers. The operating lifetime is estimated to be more than 10,000 hrs at room temperature.

Paper Details

Date Published: 22 June 1989
PDF: 8 pages
Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976349
Show Author Affiliations
T. Yamaguchi, SANYO Electric Co., Ltd. (Japan)
K. Yodoshi, SANYO Electric Co., Ltd. (Japan)
K. Minakuchi, SANYO Electric Co.. Ltd. (Japan)
Y. Inoue, SANYO Electric Co., Ltd. (Japan)
N. Tabuchi, SANYO Electric Co., Ltd. (Japan)
K. Komeda, SANYO Electric Co., Ltd. (Japan)
H. Hamada, SANYO Electric Co., Ltd. (Japan)
T. Niina, SANYO Electric Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 1043:
Laser Diode Technology and Applications
Luis Figueroa, Editor(s)

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