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Proceedings Paper

Summary Of Recent Studies On AlGaAs/GaAs Radiation Hardened Photodiodes
Author(s): J. J. Wiczer
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Paper Abstract

In this paper, we summarize the results of several studies assessing the radiation hardness of a new type of double heterojunction, A1GaAs/GaAs photodiode. These studies include transient and permanent damage experiments. Transient studies indicate that double heterostructure AlGaAs/GaAs photodiodes generate 40 times less photocurrent than conventional silicon photodiodes,Auring exposure to ionizing-radiation pulses. Permanent damage studies with neutrons, Coy' gamma rays, and high energy electron beam sources indicate only minor changes in operational characteristics after exposures. These studies have shown a 20% degradation in optical response and a factor of 8 increase in photodiode leakage current after exposure to 3.6 x 101-5 neutron/cm2 fluence. Conventional silicon photodiodes exhibit this type of degradation after exposures to 1012 - 1013 neutrons/cm2 fluences. These characteristics are important for many specialized applications requiring radiation hardness.

Paper Details

Date Published: 20 November 1985
PDF: 3 pages
Proc. SPIE 0540, Southwest Conf on Optics '85, (20 November 1985); doi: 10.1117/12.976109
Show Author Affiliations
J. J. Wiczer, Sandia National Laboratories (United States)

Published in SPIE Proceedings Vol. 0540:
Southwest Conf on Optics '85
Susanne C. Stotlar, Editor(s)

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