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Proceedings Paper

Registration Accuracy And Critical Dimension Control For A 5X Reduction Stepper With Magnification Control
Author(s): F. J. van Hout; M. A. van den Brink; S. Wittekoek
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Paper Abstract

Today, the resolution of state-of-the-art microlithography lenses is well within the submicron region. There are many indications that the historical drive to better resolution will continue at least for the coming years. In order to fully utilize this improved lens performance in wafer steppers the alignment overlay accuracy has to improve in a similar way, thus increasing total yield. As a rule-of-thumb in current IC design the overlay accuracy should not exceed approximately 20% of the lens resolution. Hence, the overlay accuracy of a wafer stepper capable of printing 0.7 pm features should be around 0.15 μm. At the same time, the requirements for illumination and focussing/levelling accuracy become tighter to enable effective use of these high aperture lenses. In addition, factory requirements for IC production equipment now stipulate completely automatic operation as well as 'clean' design to ensure that both wafers and reticles remain absolutely clean during the IC manufacturing process.

Paper Details

Date Published: 17 September 1987
PDF: 12 pages
Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975604
Show Author Affiliations
F. J. van Hout, ASM Lithography (Netherlands)
M. A. van den Brink, ASM Lithography (Netherlands)
S. Wittekoek, ASM Lithography (Netherlands)

Published in SPIE Proceedings Vol. 0811:
Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection
Harry L. Stover; Stefan Wittekoek, Editor(s)

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