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Proceedings Paper

A Novel Technique For The Control Of Resist Profiles When Exposing With Steppers.
Author(s): F. Debaene; J. M. Dumant; B. Latombe
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Paper Abstract

To improve reliability of metal covering in a CMOS 1 Micron advanced technology, a sloping of vias during etching is required. This needs a photoresist sidewall action, since standard sidewalls created in step and repeat lithography are close to 85°. As classical thermal flow techniques are not suitable for small dimensional patterns, a new method has been developed, which uses the partial resolution of submicron patterns through the lens of a stepper. Such a technique requires modification of .the reticle but in no way changes the normal lithography process. Using this method, it is possible to reproducibly obtain slopes as low as 55°. A complete parametric experimental study, simulation results and pilot line applications are presented. This new technique has excellent repeatibility and process control, and has therefore been successfully put into application in the fabrication of vias in a double metal technology as well as for increasing the contrast of alignment marks in an automatic alignment system. The etching process of the vias is therefore simplified.

Paper Details

Date Published: 17 September 1987
PDF: 7 pages
Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975599
Show Author Affiliations
F. Debaene, C.N.E.T. MEYLAN (France)
J. M. Dumant, C.N.E.T. MEYLAN (France)
B. Latombe, C.N.E.T. MEYLAN (France)

Published in SPIE Proceedings Vol. 0811:
Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection
Harry L. Stover; Stefan Wittekoek, Editor(s)

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