Proceedings Paper
Effects Of Impurity On The IR Absorption Bands Of Si-H Centers| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
The IR bands in N-type and P-type floating-zone silicon grown in hydrogen atmosphere before and after neutron irradiation have been studied using FT-IR spectroscopy. The effects of impurity on the IR bands of Si-H centers have been observed.
Paper Details
Date Published: 20 December 1985
PDF: 2 pages
Proc. SPIE 0553, Fourier and Computerized Infrared Spectroscopy, (20 December 1985); doi: 10.1117/12.970897
Published in SPIE Proceedings Vol. 0553:
Fourier and Computerized Infrared Spectroscopy
David G. Cameron; Jeannette G. Grasselli, Editor(s)
PDF: 2 pages
Proc. SPIE 0553, Fourier and Computerized Infrared Spectroscopy, (20 December 1985); doi: 10.1117/12.970897
Show Author Affiliations
Du Yongchang, Beijing University (China)
Zhang Yufeng, Beijing University (China)
Zhang Yufeng, Beijing University (China)
Weng Shifu, Beijing University (China)
Published in SPIE Proceedings Vol. 0553:
Fourier and Computerized Infrared Spectroscopy
David G. Cameron; Jeannette G. Grasselli, Editor(s)
© SPIE. Terms of Use
