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Proceedings Paper

Effects Of Impurity On The IR Absorption Bands Of Si-H Centers
Author(s): Du Yongchang; Zhang Yufeng; Weng Shifu
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Paper Abstract

The IR bands in N-type and P-type floating-zone silicon grown in hydrogen atmosphere before and after neutron irradiation have been studied using FT-IR spectroscopy. The effects of impurity on the IR bands of Si-H centers have been observed.

Paper Details

Date Published: 20 December 1985
PDF: 2 pages
Proc. SPIE 0553, Fourier and Computerized Infrared Spectroscopy, (20 December 1985); doi: 10.1117/12.970897
Show Author Affiliations
Du Yongchang, Beijing University (China)
Zhang Yufeng, Beijing University (China)
Weng Shifu, Beijing University (China)

Published in SPIE Proceedings Vol. 0553:
Fourier and Computerized Infrared Spectroscopy
David G. Cameron; Jeannette G. Grasselli, Editor(s)

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