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Proceedings Paper

Determination of the density-of-states function in highly degenerate semiconductors in the existence of electric field strength
Author(s): Subhamoy Singha Roy
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Paper Abstract

An attempt is made to study the energy spectrum of the transmission electrons and analogous density-of-states function of degenerate semiconductors in the occurrence of an electric field strength. It is found, captivating n-GaAs as an example that the isotropic parabolic energy spectrum converts into an anisotropic dispersion relation with energy dependent mass anisotropy in the occurrence of electric field strength. In addition the band gap increases with electric field strength and the carriers vanish from the transmission band edge after definite value of the electric field strength. The eminent consequence of the density-of-states function for non-degenerate wide gap optical and optoelectronic materials with parabolic energy band has been obtained as special cases of our generalized theory under definite limiting background from our generalized term when electric field strength is zero.

Paper Details

Date Published: 19 November 2012
PDF: 8 pages
Proc. SPIE 8542, Electro-Optical Remote Sensing, Photonic Technologies, and Applications VI, 85421H (19 November 2012); doi: 10.1117/12.970544
Show Author Affiliations
Subhamoy Singha Roy, JIS College of Engineering (India)

Published in SPIE Proceedings Vol. 8542:
Electro-Optical Remote Sensing, Photonic Technologies, and Applications VI
Gary W. Kamerman; Gary J. Bishop; Mark T. Gruneisen; Keith L. Lewis; Miloslav Dusek; Richard C. Hollins; Ove Steinvall; John Gonglewski; John G. Rarity; Thomas J. Merlet, Editor(s)

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