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Proceedings Paper

Radiometric Calibration Of Fourier Transform Semiconductor Photoluminescence
Author(s): N. L. Rowell
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Paper Abstract

The radiometic calibration of a Fourier transform spectrometer has been carried out with relation to semiconductor photoluminescence. The technique employed made use of a calibrated source of spectral irradiance and a diffuse reflector of known spectral reflectance. To obtain the instrumental calibration from 700 meV to 1500 meV (5600 to 12000 cm-1), the luminescent material was replaced by the illuminated diffuser and its spectrum was measured. An example is given of the photoluminescence of a silicon film grown by molecular beam epitaxy (MBE) with in situa ion beam doping (IBD) of Ask+-ions. The spectra before and after the application of the radiometric correction are compared over the range 740 to 1160 meV.

Paper Details

Date Published: 1 December 1989
PDF: 3 pages
Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989); doi: 10.1117/12.969643
Show Author Affiliations
N. L. Rowell, National Research Council (Canada)

Published in SPIE Proceedings Vol. 1145:
7th Intl Conf on Fourier Transform Spectroscopy
David G. Cameron, Editor(s)

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