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Proceedings Paper

Quantitative IR-Spectroscopy Of Interstitial Oxygen In Heavily Doped Silicon
Author(s): A. Borghesi; M. Geddo; G Guizzetti; P. Geranzani
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Paper Abstract

The interstitial oxygen content of heavily Sb-doped silicon wafers, up to 2 x 1018 at/cm3, has been measured by FTIR transmission, using a short baseline. The results of systematic measurements of two lots of 16 samples each, performed with FTIR and SIMS techniques, show a linear correlation between the two sets, although the IR technique estimates are consistently lower than those from SIMS.

Paper Details

Date Published: 1 December 1989
PDF: 2 pages
Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989); doi: 10.1117/12.969485
Show Author Affiliations
A. Borghesi, University di Pavia (Italy)
M. Geddo, University di Pavia (Italy)
G Guizzetti, University di Pavia (Italy)
P. Geranzani, DNS Electronic Materials S.p.A (Italy)

Published in SPIE Proceedings Vol. 1145:
7th Intl Conf on Fourier Transform Spectroscopy
David G. Cameron, Editor(s)

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