Laser Chemical Vapor Deposition (LCVD) has been attracting a considerable amount of interest to deposit thin-films for microelectronics structures. In this paper we will discuss the progress obtained from a series of experiments of several laser-based methods, taking in to particular consideration only the Silicon deposition. Depending on the gas and kind of laser used different kinetics can be selectively induced leading to distinct film-morphologies and diverse growth parameters. LCVD processes also offers the capabilities of reduced temperature processing and mask-less patterning for sub-micron resolution. Further investigations are needed to explore the wide potential of LCVD applications.

Date Published: 16 January 1988
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Proc. SPIE 0952, Laser Technologies in Industry, (16 January 1988); doi: 10.1117/12.968910

Published in SPIE Proceedings Vol. 0952:
Laser Technologies in Industry
Silverio P. Almeida; Luis Miguel Bernardo; Oliverio D.D. Soares, Editor(s)