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Proceedings Paper

A PMMA/PMGI Two Layer Resist System for Stable Lift-off Processing
Author(s): Hiroshi Takenaka; Yoshihiro Todokoro
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Paper Abstract

A two layer resist system for the e-beam/deep-UV same-level-mixed lithography are described, which consists of PMMA (poly ( methyl methacryrate )), as a top layer and PMGI (poly ( dimethyl glutarimide )) as a bottom layer. Controlled undercut profiles are obtained both in e-beam and deep-UV lithography. Good adhesion of PMGI to the GaAs substrate during wet recess-etching prevents excessive side etching of the substrate. 0.25-0.5 um gate electrodes of GaAs FET's have been fabricated by using the two layer resist system.

Paper Details

Date Published: 1 August 1989
PDF: 8 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968522
Show Author Affiliations
Hiroshi Takenaka, Matsushita Electronics Corporation (Japan)
Yoshihiro Todokoro, Matsushita Electronics Corporation (Japan)

Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

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