Share Email Print

Proceedings Paper

GaAs FET Mushroom Gate Fabricated By FIB/EB Hybrid Lithography
Author(s): K. Hosono; H. Morimoto; H. Minami; K. Nagahama; Y. Watakabe; T. Kato
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A mushroom-gate structure for a high electron mobility transistor (HEMT) has been fabricated by a hybrid lithography process of focused ion beam (FIB) and shaped electron beam (EB). In this process, a resist in the gate region is reduced to about 0.2 μm by FIB lithography ("top gate" formation), and then the center of the top gate is exposed by the EB ("bottom gate" formation). Patterns of 0.20~0.25 pm were reproducibly delineated on the GaAs substrate by shaped EB. After recess etching and lift-off process, a 0.2 μm mushroom gate of HEMTs was obtained without substrate damage. The overlay accuracy for the FIB and EB exposure were both less than 0.2 μm.

Paper Details

Date Published: 1 August 1989
PDF: 7 pages
Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968512
Show Author Affiliations
K. Hosono, Mitsubishi Electric Corporation (Japan)
H. Morimoto, Mitsubishi Electric Corporation (Japan)
H. Minami, Mitsubishi Electric Corporation (Japan)
K. Nagahama, Mitsubishi Electric Corporation (Japan)
Y. Watakabe, Mitsubishi Electric Corporation (Japan)
T. Kato, Mitsubishi Electric Corporation (Japan)

Published in SPIE Proceedings Vol. 1089:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII
Arnold W. Yanof, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?