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Proceedings Paper

An Improved Fluorescence Technique For Optical Measurements Below One Micron
Author(s): Stephen Williams; Vincent Coates; Roger Ingalls
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Paper Abstract

Because of their convenience, reliability and moderate cost, it is desirable to extend the measurement capability of optical methods during integrated circuit manufacture as far as theoretically possible into the submicron range. Critical dimensions on photoresist as small as 0.4 micron have been measured with good precision using optical fluorescence microscopy. In addition, using new, recently developed algorithms, etched wafer features below one micron have been measured reliably using briqhtfield techniques.

Paper Details

Date Published: 1 January 1988
PDF: 7 pages
Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); doi: 10.1117/12.968360
Show Author Affiliations
Stephen Williams, Nanometrics, Inc (United States)
Vincent Coates, Nanometrics, Inc (United States)
Roger Ingalls, Nanometrics, Inc (United States)

Published in SPIE Proceedings Vol. 0921:
Integrated Circuit Metrology, Inspection, and Process Control II
Kevin M. Monahan, Editor(s)

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