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Proceedings Paper

Design Of A Positive Photoresist For Submicron Imaging Assisted By SAMPLE Simulation
Author(s): T. Kokubo; Y. Idemoto; Y. Kawabe; K. Uenishi
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Paper Abstract

A design of g-line positive photoresists has been conducted by using SAMPLE simulation for the purpose of providing higher resolution and more vertical profile. By varying resist parameters in the simulation and knowing their influences on the physical properties of resists, some useful guiding principles for the design of submicron resists have been obtained. It was found that an increase in the amount of photobleachble component (A) was effective for the improvement in resolution, and an increase in dissolution rate of unexposed part (R2) was also found to be effective for the improvement. However, the same factors were found to give rather negative effect to the steepness of the profile. Thus a trade off relationship between resolution and profile was suggested from the same simulation. The trade off relationship was also confirmed in experimental observations. Based on the above, a new positive photoresist was designed, however, which in use, exhibited not only higher resolution but also better profile than the conventional resist used as a reference. The simulated profiles of the new resist on submicron imaging were not consistent with the actually observed images. A modification of the resist development modelling was made for more precise simulation of the new resist. A revised model incorporating "proximity effects in the development" into the parameter definitions, yielded results which were consistent with the actual images.

Paper Details

Date Published: 1 January 1988
PDF: 9 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968336
Show Author Affiliations
T. Kokubo, Fuji Photo Film Co. Ltd. (Japan)
Y. Idemoto, Fuji Photo Film Co. Ltd. (Japan)
Y. Kawabe, Fuji Photo Film Co. Ltd. (Japan)
K. Uenishi, Fuji Photo Film Co. Ltd. (Japan)

Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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