
Proceedings Paper
Alkali-Developable Organosilicon Positive Photoresist(OSPR)Format | Member Price | Non-Member Price |
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Paper Abstract
A new alkali-developable organosilicon positive photoresist for a bi-layer resist system has been developed. Novel alkali-soluble organosilicon polymers, polysilsesquioxane, polysiloxane, and polysil-methylene, were prepared as the matrix polymers. Among these polymers, poly(p-hydroxybenzylsilsesquioxane) ( I) exhibited the highest 09RIE resistance. A composite (OSPR-1334)prepared from I and naphEho-quinone diazide becomes an alkali-developable positive photoresist which is sensitive to i - g line light. The sensitivity and the resolution of OSPR-1334 are almost the same as those of conventional novolac-based resists when aqueous tetra(2-hydroxyethyl)ammonium hydroxide is used as the developer. Also, OSPR-1334 has excellent resistance to O2RIE. The etch rate is 3.6 nm/min, while that of polyimide or novolac-based resists is 100 nm/min. Thus, OSPR-1334 is suitable for use as the top layer of a bi-layer resist system. Submicron patterns with high aspect ratio can be easily obtained with this new bi-layer resist system.
Paper Details
Date Published: 1 January 1988
PDF: 6 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968328
Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)
PDF: 6 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968328
Show Author Affiliations
Hisashi Sugiyama, Hitachi, Ltd. (Japan)
Takashi Inoue, Hitachi, Ltd. (Japan)
Takashi Inoue, Hitachi, Ltd. (Japan)
Akiko Mizushima, Hitachi, Ltd. (Japan)
Kazuo Nate, Hitachi, Ltd. (Japan)
Kazuo Nate, Hitachi, Ltd. (Japan)
Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)
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