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Proceedings Paper

"Masking Effect" And "Internal CEL" New Design Concepts For A Positive Working Photoresist
Author(s): Konoe Miura; Tameichi Ochiai; Yasuhiro Kameyama; Chie Kashi; Shigeo Uoya; Masayuki Nakajima; Akira Kawai; Shinji Kishimura
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Paper Abstract

Two new concepts,"masking effect" and "internal CEL", are proposed to design a high resolution quinonediazide-novolak type photoresist. On the basis of these two design concepts, we optimized the composition of the resist, and succeeded in developing a high resolution resist, which is composed of m-cresol/p-cresol/xylenol/formaldehyde novolak resin and 2 ,3 ,4 , 4' -tetrahydroxybenzophenone 1 , 2 -naphtoquinonediaz ide-5 -sulfonate. This resist can resolve as small as 0.6 um lines & spaces with aspect ratio of 2.7 (NA.0.42) and has the gamma value of 2.0.

Paper Details

Date Published: 1 January 1988
PDF: 8 pages
Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968311
Show Author Affiliations
Konoe Miura, Mitsubishi Chemical Industries Ltd. (Japan)
Tameichi Ochiai, Mitsubishi Chemical Industries Ltd. (Japan)
Yasuhiro Kameyama, Mitsubishi Chemical Industries Ltd. (Japan)
Chie Kashi, Mitsubishi Chemical Industries Ltd. (Japan)
Shigeo Uoya, Mitsubishi Electric Corporation (Japan)
Masayuki Nakajima, Mitsubishi Electric Corporation (Japan)
Akira Kawai, Mitsubishi Electric Corporation (Japan)
Shinji Kishimura, Mitsubishi Electric Corporation (Japan)

Published in SPIE Proceedings Vol. 0920:
Advances in Resist Technology and Processing V
Scott A. MacDonald, Editor(s)

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