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Proceedings Paper

Photomask film degradation effects in the wafer fab: how to detect and monitor over time
Author(s): John Whittey; Carl Hess; Edgardo Garcia; Mark Wagner; Brian Duffy
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Paper Abstract

As a result of repeated cleanings and exposure effects such as chrome migration or MoSi oxidation some photomasks in the semiconductor fabs exhibit changes in critical dimension uniformity (CDU) over time. Detecting these effects in a timely manner allows for better risk management and process control in manufacturing. By monitoring changes in film reflectance intensity due to the various degradation mechanisms it is possible to predict when they may begin to influence across chip line width variations (ACLV). By accurately predicting the magnitude of these changes it is possible for semiconductor manufacturers to replace the photomasks before they have an impact on yields. This paper looks at possible causes of CDU variations on reticles during use and how this information might be used to improve or monitor reticle CDU changes over time.

Paper Details

Date Published: 8 November 2012
PDF: 5 pages
Proc. SPIE 8522, Photomask Technology 2012, 85221D (8 November 2012); doi: 10.1117/12.968166
Show Author Affiliations
John Whittey, KLA-Tencor Corp. (United States)
Carl Hess, KLA-Tencor Corp. (United States)
Edgardo Garcia, KLA-Tencor Corp. (United States)
Mark Wagner, KLA-Tencor Corp. (United States)
Brian Duffy, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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