Proceedings Paper
Effect Of Crossed Eleotric And Magnetic Fields On The Gate Capacitance Of MOS Structures Of N--Channel Inversion Layers Of Ternary Semiconductors| Format | Member Price | Non-Member Price |
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Paper Abstract
It is well-known that the gate capacitance of MOS structures of n-channel inversion layers on small-gap semiconductors is very important parameter since the MOS capacitance can be very easily controlled by varying the gate voltage and also since it explores various other fundamental features of semconductor surfaces in MOS structures. However, the gate capacitance of MOS structures of n-channel inversion layers on ternary semiconductors in the presence of crossed electric and magnetic fields has yet to be investigated since the cross-field configuration is of fundamental importance for classical and quantum transport phenomena.
Paper Details
Date Published: 1 January 1987
PDF: 8 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967530
Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)
PDF: 8 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967530
Show Author Affiliations
K. P. Ghatak, Centre of Advanced Study in Radio Physics and Electronics (India)
N. Chattopadhyay, University College of Science and Technology (India)
N. Chattopadhyay, University College of Science and Technology (India)
S. N. Biswas, Bengal Engineering College (India)
Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)
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