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Proceedings Paper

Characterization Of GaAlAs Optical Waveguide Heterostructures Grown By Molecular Beam Epitaxy
Author(s): C. J. Radens; H. E. Jackson; J. T. Boyd; K. B. Bhasin; J. J. Pouch; L. Davis
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Paper Abstract

Multiple layer GaA1As optical waveguide heterostructures have been grown by molecular beam epitaxy. These samples were designed to operate at a wavelength of .84 microns with negligible coupling of guided light to the absorbing GaAs substrate. The aluminum concentration was 13% for the guiding layer and was 16% for the cladding layers. The process for growing waveguide layers was calibrated primarily by high energy electron diffraction with the optical quality confirmed by photoluminescence measurements. Channel waveguide structures having widths of 5 microns were etched in a low pressure, magnetically confined, multipolar plasma reactor. The resulting waveguide structures were characterized by Raman spectroscopy, ellipsometry, Auger electron spectroscopy and optical waveguide loss measurements.

Paper Details

Date Published: 1 January 1987
PDF: 4 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967529
Show Author Affiliations
C. J. Radens, University of Cincinnati (United States)
H. E. Jackson, University of Cincinnati (United States)
J. T. Boyd, University of Cincinnati (United States)
K. B. Bhasin, NASA Lewis Research Center (United States)
J. J. Pouch, NASA Lewis Research Center (United States)
L. Davis, Perkin-Elmer (United States)

Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)

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