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Proceedings Paper

Preparation And Characterization Of RF Sputtered A-Si:H Films For Optoelectronic Device Applications.
Author(s): J. J. Sluss Jr.; T. E. Batchman
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Paper Abstract

The preparation of hydrogenated amorphous silicon. (a-Si:H) thin films by RF sputtering has been investi-gated. Subsequent characterization of the properties of these films indicates that this manner of deposition is suitable for use in the fabrication of thin-film waveguide photodetectors.

Paper Details

Date Published: 1 January 1987
PDF: 5 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967522
Show Author Affiliations
J. J. Sluss Jr., University of Virginia (United States)
T. E. Batchman, University of Virginia (United States)

Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)

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