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Proceedings Paper

Testing Of VLSI Devices Using Electro-Optic Effects In Silicon
Author(s): Gregory N. Koskowich; Mani Soma
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Paper Abstract

The Kramers-Kronig relations have been used to determine the change in index of refraction for crystalline Silicon (Si) from absorption data. The Franz-Keldysh effect and the presence of free carriers both have an effect on the index of refraction of the pn junction diode. The results have been used to predict the sensitivity of a technique for measuring on-chip voltages in VLSI devices. A difference in sensitivity for PMOS and NMOS on a single substrate is calculated, in contrast to the simple theoretical result.

Paper Details

Date Published: 1 January 1987
PDF: 3 pages
Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967521
Show Author Affiliations
Gregory N. Koskowich, University of Washington (United States)
Mani Soma, University of Washington (United States)

Published in SPIE Proceedings Vol. 0836:
Optoelectronic Materials, Devices, Packaging, and Interconnects
Theodore E. Batchman; Richard Franklin Carson; Robert L. Galawa; Henry J. Wojtunik, Editor(s)

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