Proceedings Paper
Modeling The Images Of Alignment Marks Under Photoresist| Format | Member Price | Non-Member Price |
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Paper Abstract
A method for computing the images of contoured layered media is presented. The wave equation is solved in the layers by invoking the Rayleigh hypothesis, and the solution is cast in the form of a scattering matrix which relates the Fourier components of the incoming field to those of the outgoing field. Images of layered structures produced by a given optical system can be calculated by combining the scattering matrix representing the object with matrices representing the illumination and imaging optics which include the effects of apertures and aberrations. Results from the application of this technique to the problem of imaging alignment marks under photoresist will be presented and compared with experiment.
Paper Details
Date Published: 1 January 1987
PDF: 9 pages
Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); doi: 10.1117/12.967050
Published in SPIE Proceedings Vol. 0772:
Optical Microlithography VI
Harry L. Stover, Editor(s)
PDF: 9 pages
Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); doi: 10.1117/12.967050
Show Author Affiliations
G. M. Gallatin, The Perkin-Elmer Corporation (United States)
J. C. Webster, The Perkin-Elmer Corporation (United States)
J. C. Webster, The Perkin-Elmer Corporation (United States)
E. C. Kintner, The Perkin-Elmer Corporation (United States)
F. Wu, The Perkin-Elmer Corporation (United States)
F. Wu, The Perkin-Elmer Corporation (United States)
Published in SPIE Proceedings Vol. 0772:
Optical Microlithography VI
Harry L. Stover, Editor(s)
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