Planar high-speed interdigital photoconductive detectors have been fabricated on MOCVD-grown GaInAs/GaAs heterostructures. The small intentional lattice mismatch at the GaInAs/GaAs interface allows a controlled surface recombination velocity which decreases the effective lifetime of minority carriers without significant active layer mobility degradation. The InGaAs detectors have the following characteristics: bandgap of ~ 1.25 eV; rise times of < 25 psec; fall times ~ 50-100 psec; FWHM < 45 psec; high speed responsivity ~0.3 A/W; 2-300 nA leakage current at 5-10 V operating voltages and flat analog response to ~ 15 GHz.

Date Published: 28 November 1983
PDF: 5 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966098

Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)