Ultrahigh speed photodiodes with -3dB frequency roll-off in excess of 100 GHz or equivalently in the time domain an impulse response with a full width half maximum (FWHM) of 5.4 psec have been developed and characterzed. These 100 GHz photodiodes have a planar configuration fabricated on n on n⁺ GaAs expitaxial layers on semi-insulating GaAs substrates which together with proton bombardment, have kept parasitic capacitances to ≤15 femto farads. The planar structure photodiode also lends itself easily to monolighic integration with a MESFET. The device operates at a reverse bias of -4 volts.

Date Published: 28 November 1983
PDF: 4 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966093

Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)