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Proceedings Paper

Peak Conductance Measurements Of Gaas Switching Devices
Author(s): Barry A. Bell; Arnold G. Perrey
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Paper Abstract

This paper describes the test apparatus and circuitry used to make measurements of pulsed light conductance on samples of high resistivity (107 Ω-cm) gallium arsenide switching devices, having nominal 25 PM and 700 Pm gap spacings. Differences in conductance are observed on variously grown samples. Maximum peak light conductance obtained was ≈2 millisiemens for an effective irradiated optical power on the (25 μm) gap of approximately 130 milliwatts (λ = 850 nm). Comparisons are made between the observed pulse measurements and the pulse waveforms generated by computer simulation using a model based on a theoretical analysis of the relationships between photoconductance and irradiated optical power.

Paper Details

Date Published: 28 November 1983
PDF: 14 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966085
Show Author Affiliations
Barry A. Bell, National Bureau of Standards (United States)
Arnold G. Perrey, National Bureau of Standards (United States)

Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

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