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Proceedings Paper

Modelocked Picosecond Pulses From 490 nm To 2 µm With Optically Pumped Semiconductor Lasers
Author(s): Roger S. Putnam; Michael M. Saloum
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Paper Abstract

We describe tunable cw modelocked laser action from synchronously pumped CdS, CdSSe, CdSe, InGaAsP and HgCdTe lasers. The 2-50 pm thick semiconductor platelets are longitudinally pumped and have produced 40 mW at 495 nm unmodelocked and a peak power of 50 Watts modelocked at 1.2μm. Pulsewidths of 4-6 ps with time-bandwidth products of 0.6-1.7 are obtained using intracavity etalons and Lyot filters. Intracavity tuning achieves a single crystal range of 7 nm in CdS at 495 nm, 29 nm in InGaAsP at 1.2 μm and a range of 60 nm in HgCdTe at 1.8 μm. As many as two dozen crystals have been mounted together on a micrometer stage within the dewar to all an immediate and wide tuning range. Also tuning from 1.82 to 2.0 μm via the Burstein-Moss shift in a single HgCdTe epilayer has been accomplished by varying the loss in the external cavity. A modelocked threshold as law as 0.3 mW in CdS, a 20% conversion efficiency into the TEMoo mode, and lasing in InGaAsP with optical pumping a full 1.5 eV above a 1 eV bandaap shows that an efficient and convenient picosecond source tunable through the visible and near infrared is feasible.

Paper Details

Date Published: 28 November 1983
PDF: 5 pages
Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966075
Show Author Affiliations
Roger S. Putnam, Massachusetts Institute of Technology (United States)
Michael M. Saloum, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0439:
Picosecond Optoelectronics
Gerard A. Mourou, Editor(s)

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