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Proceedings Paper

Development Of In-X Doped Silicon As An Infrared Detector Material
Author(s): D. K. Arch; D. E. Schafer
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Paper Abstract

Recently, a class of shallow acceptor levels in silicon, called X-levels, have been discovered which are associated with all the Group III A acceptors. The indium related X-level at 0.113eV appears to be ideally suited to match the 8-12μm atmospheric window. This defect has been shown to arise from a substitutional In and C nearest neighbor pair. We have performed a variety of measurements to determine the feasibility of utilizing the In-X defect in a photoconductor. In particular, silicon crystals heavily doped with both indium and carbon have been grown by thermal gradient transport from indium solutions. Annealing studies have been done to determine whether In-X concentrations in excess of 1-1017cm-3 can be produced in reasonable annealing times. Such a concentration would be necessary to produce detectors with adequate quantum efficiency.

Paper Details

Date Published: 11 June 1981
PDF: 8 pages
Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); doi: 10.1117/12.965806
Show Author Affiliations
D. K. Arch, Honeywell Corporate Materials Science Center (United States)
D. E. Schafer, Honeywell Corporate Materials Science Center (United States)

Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)

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