Proceedings Paper
Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties| Format | Member Price | Non-Member Price |
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Paper Abstract
For extrinsic silicon detector arrays, performance is optimized by a careful compromise among several material characteristics affected by growth and processing parameters. In this paper we discuss the role of the major and minor dopant concentrations on spectral response, spatial uniformity of responsivity, impact ionization and impurity band conduction. The impact of these on detector operational constraints is a key element in focal plane detector array design.
Paper Details
Date Published: 11 June 1981
PDF: 7 pages
Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); doi: 10.1117/12.965802
Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)
PDF: 7 pages
Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); doi: 10.1117/12.965802
Show Author Affiliations
O. J. Marsh, Hughes Research Laboratories (United States)
R. Baron, Hughes Research Laboratories (United States)
J. P. Baukus, Hughes Research Laboratories (United States)
R. Baron, Hughes Research Laboratories (United States)
J. P. Baukus, Hughes Research Laboratories (United States)
M. H. Young, Hughes Research Laboratories (United States)
G. D. Robertson, Hughes Research Laboratories (United States)
G. D. Robertson, Hughes Research Laboratories (United States)
Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)
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