Proceedings Paper
Magnetoresistance In IV-VI Semiconductors| Format | Member Price | Non-Member Price |
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Paper Abstract
A brief outline is given of some of the more important magnetoresistance effects seen in the IV-VI semiconductors. In addition, an interesting strong magnetic field magnetoresistance phenomenon is exhibited and the use of weak-field magnetoresistance to examine strain in thin film samples is presented in more detail. Data showing the effects discussed are given using PbTe thin films as examples.
Paper Details
Date Published: 11 June 1981
PDF: 7 pages
Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); doi: 10.1117/12.965792
Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)
PDF: 7 pages
Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); doi: 10.1117/12.965792
Show Author Affiliations
J. B. Restorff, Naval Surface Weapons Center (United States)
B. B. Houston, Naval Surface Weapons Center (United States)
Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)
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