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Proceedings Paper

The Pb/PbS0.5Se0.5 Interface And Performance Of Pb/PbS0.5Se0.5 Photodiodes
Author(s): M. Drinkwine; J. Rozenbergs; S. Jost; A. Amith
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Paper Abstract

Surface analysis has indicated that improved IV-VI metal-semiconductor photodiode performance results from the incorporation of chlorine at the Pb/semiconductor interface. Lower reverse bias leakage current and steeper forward bias slope are observed in devices fabricated from material treated with chlorine than devices which are processed normally. RoA values of 250 Ω cm2 and Dλ* values of 1 x 10^11 cm Hz1/2 W-1 at 80K for 10-and 80-mil diameter active area devices have been obtained.

Paper Details

Date Published: 11 June 1981
PDF: 8 pages
Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); doi: 10.1117/12.965789
Show Author Affiliations
M. Drinkwine, ITT Electro-Optical Products Division (United States)
J. Rozenbergs, ITT Electro-Optical Products Division (United States)
S. Jost, ITT Electro-Optical Products Division (United States)
A. Amith, ITT Electro-Optical Products Division (United States)

Published in SPIE Proceedings Vol. 0285:
Infrared Detector Materials
H. R. Riedl, Editor(s)

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