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Proceedings Paper

InGaAs Avalanche Photodetectors
Author(s): G. E. Stillman; L. W. Cook; M. M. Tashima; N. Tabatabaie
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Paper Abstract

The development of optical fibers with extremely low loss and near zero pulse dispersion in the 1.30-1.55 pm spectral range has generated considerable interest in emitters and detectors for use in optical fiber communication systems utilizing these wavelengths. The InGaAsP quaternary alloy, lattice matched to InP, is one of at least three different semi-conductor alloys being evaluated for detector applications in these systems. In this paper we will review some of the previous results obtained in InGaAsP/InP photodetectors, and discuss the possible mechanisms responsible for the large dark current observed in some of these devices. The material properties and device structures which minimize the dark current are described, and the possibilities of achieving efficient avalanche photodiodes using these materials are evaluated.

Paper Details

Date Published: 28 July 1981
PDF: 9 pages
Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); doi: 10.1117/12.965684
Show Author Affiliations
G. E. Stillman, University of Illinois at Urbana-Champaign (United States)
L. W. Cook, University of Illinois at Urbana-Champaign (United States)
M. M. Tashima, University of Illinois at Urbana-Champaign (United States)
N. Tabatabaie, University of Illinois at Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 0272:
High Speed Photodetectors
Lou Tomasetta, Editor(s)

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