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Proceedings Paper

Raman Spectroscopy Diagnostics For HIGH-Tc Thin Films
Author(s): L. A. Farrow; Siu-Wai Chan; L. H. Greene; W. L. Feldmann; T. Venkatesan; W. A. Bonner; R. R. Krchnavek; S. J. Allen
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Paper Abstract

Raman spectroscopy can provide information about stoichiometry, oxygen content, and crystal structure of high-Tc thin films in a rapid, contactless, non-destructive manner at room temperature. Data are presented for both polycrystalline and single crystal-like films. An example is given of the potential utility for direct local analysis of patterned films with features as small as 1µm.

Paper Details

Date Published: 19 March 1990
PDF: 8 pages
Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965169
Show Author Affiliations
L. A. Farrow, Bellcore (United States)
Siu-Wai Chan, Bellcore (United States)
L. H. Greene, Bellcore (United States)
W. L. Feldmann, Bellcore (United States)
T. Venkatesan, Bellcore (United States)
W. A. Bonner, Bellcore (United States)
R. R. Krchnavek, Bellcore (United States)
S. J. Allen, Bellcore (United States)

Published in SPIE Proceedings Vol. 1187:
Processing of Films for High Tc Superconducting Electronics
T. Venkatesan, Editor(s)

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