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Proceedings Paper

Growth of High TcYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition
Author(s): P. S. Kirlin; R. Binder; R. Gardiner; D. W. Brown
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Paper Abstract

Thin films of YBa2Cu3O7-x were grown on MgO(100) by metalorganic chemical vapor deposition (MOCVD). Low pressure growth studies were carried out between 400 and 600°C using metal β-diketonate complexes as source reagents for Y, Ba, and Cu. As-deposited films were amorphous and a two stage annealing protocol was used in which fluorine was first removed in a Ar/H20 stream between 700 and 850°C, followed by calcination in flowing oxygen between 500 and 950°C. Scanning electron microscopy, X-ray diffraction and energy dispersive analysis indicate that good compositional and dimensional uniformity could be achieved. The temperature of the oxygen annealing step was shown to have a dramatic impact on the physical and electrical properties of the YBa2Cu307-x thin films. Annealing temperatures exceeding 910°C gave large crystallites and semiconducting resistivity above Tc; annealing temperatures below 910°C yielded films with metallic conductivity whose density and superconducting transition varied inversely with maximum annealing temperature. Optimized deposition/annealing protocols yielded films with a preferred c-axis orientation, R273/R100 ratios of 2, onsets as high as 94K and zero resistance exceeding 90K.

Paper Details

Date Published: 19 March 1990
PDF: 15 pages
Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965154
Show Author Affiliations
P. S. Kirlin, Advanced Technology Materials, Inc. (United States)
R. Binder, Advanced Technology Materials, Inc. (United States)
R. Gardiner, Advanced Technology Materials, Inc. (United States)
D. W. Brown, Advanced Technology Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 1187:
Processing of Films for High Tc Superconducting Electronics
T. Venkatesan, Editor(s)

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