High-Tc superconducting thin films of Bismuth layered perovskite were artificially prepared by reactive sequential deposition of Bi, SrCu, and CaCu using DC magnetron multitarget sputtering. This deposition technique achieves a selective growth for Bismuth system composed with four and five Cu-0 planes by controlling the deposition time of CaCu oxide and its input power. These were post annealed and it was made sure that thin films with five Cu-0 planes did not exhibit zero resistivity. In order to obtain the as-deposited superconducting thin films, intermittent deposition technique was investigated. The Details about this fabrication process were studied referring to superconducting properties and crystal structure.

Date Published: 19 March 1990
PDF: 10 pages
Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965144

Published in SPIE Proceedings Vol. 1187:
Processing of Films for High Tc Superconducting Electronics
T. Venkatesan, Editor(s)