Proceedings Paper
Characteristics And Applications Of Semiconductor Photodiodes From The Visible To The X-Ray Region| Format | Member Price | Non-Member Price |
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Paper Abstract
The quantum efficiencies of a Si pnn+ and a GaAsP Schottky photodiode have been measured in the photon energy range from 5 to 1000 eV. The efficiency is generally much higher than that of photoemissive detectors. The performance of the Si diode is affected by soft X-ray exposure, but for the Schottky diode a stable quantum efficiency is observed over the entire spectral range making this device attractive for many applications.
Paper Details
Date Published: 1 January 1986
PDF: 5 pages
Proc. SPIE 0733, Soft X-Ray Optics and Technology, (1 January 1986); doi: 10.1117/12.964949
Published in SPIE Proceedings Vol. 0733:
Soft X-Ray Optics and Technology
E. Koch; Guenther A. Schmahl, Editor(s)
PDF: 5 pages
Proc. SPIE 0733, Soft X-Ray Optics and Technology, (1 January 1986); doi: 10.1117/12.964949
Show Author Affiliations
J. Barth, Max-Planck-Institut fur Festkorperforschung (Germany)
E. Tegeler, Institut Berlin (Germany)
E. Tegeler, Institut Berlin (Germany)
M. Krisch, Universitat Hamburg (Germany)
R. Wolf, Universitat Hamburg (Germany)
R. Wolf, Universitat Hamburg (Germany)
Published in SPIE Proceedings Vol. 0733:
Soft X-Ray Optics and Technology
E. Koch; Guenther A. Schmahl, Editor(s)
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