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Proceedings Paper

Characteristics And Applications Of Semiconductor Photodiodes From The Visible To The X-Ray Region
Author(s): J. Barth; E. Tegeler; M. Krisch; R. Wolf
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Paper Abstract

The quantum efficiencies of a Si pnn+ and a GaAsP Schottky photodiode have been measured in the photon energy range from 5 to 1000 eV. The efficiency is generally much higher than that of photoemissive detectors. The performance of the Si diode is affected by soft X-ray exposure, but for the Schottky diode a stable quantum efficiency is observed over the entire spectral range making this device attractive for many applications.

Paper Details

Date Published: 1 January 1986
PDF: 5 pages
Proc. SPIE 0733, Soft X-Ray Optics and Technology, (1 January 1986); doi: 10.1117/12.964949
Show Author Affiliations
J. Barth, Max-Planck-Institut fur Festkorperforschung (Germany)
E. Tegeler, Institut Berlin (Germany)
M. Krisch, Universitat Hamburg (Germany)
R. Wolf, Universitat Hamburg (Germany)

Published in SPIE Proceedings Vol. 0733:
Soft X-Ray Optics and Technology
E. Koch; Guenther A. Schmahl, Editor(s)

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