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Proceedings Paper

Evaluation of EUV mask cleaning process
Author(s): Pavel Nesladek; Stefan Rümmelin; Uzodinma Okoroanyanwu
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Paper Abstract

This paper presents results of the optimization of an EUV mask cleaning process and compares the results to data obtained on COG and EPSM masks using processes specifically designed for such masks. The key parameter investigated was cleaning efficiency, as measured in terms of Particle Removal Efficiency (PRE), CD shift and actinic reflectivity change. The PRE of 100%, 84%, and 80% was obtained for COG, EUV and HT-PSM masks, respectively. The CD change per clean cycle was 0.07nm. The feature damage limit was 50nm. Actinic reflectivity change in the range <0.1% per clean cycle was obtained for the process.

Paper Details

Date Published: 29 June 2012
PDF: 9 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844119 (29 June 2012); doi: 10.1117/12.964413
Show Author Affiliations
Pavel Nesladek, Advanced Mask Technology Ctr. (Germany)
Stefan Rümmelin, Advanced Mask Technology Ctr. (Germany)
Uzodinma Okoroanyanwu, GLOBALFOUNDRIES (Germany)
Advanced Mask Technology Ctr. (Germany)

Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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