Proceedings Paper
Rapid Isothermal Processing (RIP) Of Advanced Electronic Materials| Format | Member Price | Non-Member Price |
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Paper Abstract
Rapid isothermal processing (RIP) based on incoherent sources of light has emerged as a major semiconductor processing technique. In this paper, new results on the use of in-situ RIP for the solid phase epitaxial growth of II A fluorides, annealing of phosphosilicate glass on Si substrates, RIP assisted MOCVD of Y-Ba-Cu-O as well as unexplored areas and directions for future research are presented.
Paper Details
Date Published: 23 February 1990
PDF: 21 pages
Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963991
Published in SPIE Proceedings Vol. 1190:
Laser/Optical Processing of Electronic Materials
Jagdish Narayan, Editor(s)
PDF: 21 pages
Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963991
Show Author Affiliations
R. Singh, University of Oklahoma (United States)
Published in SPIE Proceedings Vol. 1190:
Laser/Optical Processing of Electronic Materials
Jagdish Narayan, Editor(s)
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