Share Email Print

Proceedings Paper

Point Defects Induced In Silicon During Excimer Laser Doping In BCl3 and PCl3 Atmosphere
Author(s): G. G. Bentini; M. Bianconi; L. Correra; R. Fabbri; R. Nipoti; S. Nicoletti
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Silicon doping by high fluence pulsed laser irradiation in BC13 and PC13 atmospheres has been performed giving rise to shallow heavily doped junctions. The doped layers are free from extended defects, nevertheless a reduction of carrier mobility has been evidenced. Point defects originated by the fast solidification of the molten surface are responsible for the degradation of the transpOrt properties in the doped layer. The strain profile, originated from the point defect distribution, have been measured for different irradiation conditions. It was evidenced that the defective region is mostly limited inside the doped layer. A remarkable reduction of point defects is obseved when the laser irradiation takes place on samples kept at 400°C. At this temperature the speed of the solidification front is reduced of about 40%, thus limiting the number of quenched point defects.

Paper Details

Date Published: 23 February 1990
PDF: 10 pages
Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963988
Show Author Affiliations
G. G. Bentini, CNR - Istituto LAMEL (Italy)
M. Bianconi, CNR - Istituto LAMEL (Italy)
L. Correra, CNR - Istituto LAMEL (Italy)
R. Fabbri, CNR - Istituto LAMEL (Italy)
R. Nipoti, CNR - Istituto LAMEL (Italy)
S. Nicoletti, AUR.EL. (Italy)

Published in SPIE Proceedings Vol. 1190:
Laser/Optical Processing of Electronic Materials
Jagdish Narayan, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?