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Proceedings Paper

Wavelength Dependence Of Boron Doping In Silicon Photochemical Vapor Deposition
Author(s): Satoru Watanabe; Tatsuya Yamazaki; Takashi Ito
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Paper Abstract

We investigated silicon photochemical vapor deposition using a disilane, diborane, and hydrogen gas system under a deuterium and a mercury lamps. Vacuum ultraviolet light reduces seriously the boron doping. We found that this is mainly due to gas phase reaction of vacuum ultraviolet excited radicals. Ultraviolet light does not affect these gas phase reaction. It irradiates the wafer surface and make it active. The enhancement of the electric activation rate of boron in silicon layer observed under UV irradiation is due to the surface activation.

Paper Details

Date Published: 23 February 1990
PDF: 5 pages
Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963983
Show Author Affiliations
Satoru Watanabe, Fujitsu Laboratories Ltd. Atsugi (Japan)
Tatsuya Yamazaki, Fujitsu Laboratories Ltd. Atsugi (Japan)
Takashi Ito, Fujitsu Laboratories Ltd. Atsugi (Japan)

Published in SPIE Proceedings Vol. 1190:
Laser/Optical Processing of Electronic Materials
Jagdish Narayan, Editor(s)

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