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Proceedings Paper

Deep Level Defects In Ion Implanted Laser Annealed Bulk GaAs
Author(s): Mqhele E. Dlodlo; Andrzej Rys; Akhter U. Ahmed; James H. Edgar
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Paper Abstract

In this paper, we report on the carrier activation and deep level crystal defects in pulsed excimer laser (A = 308 nm) anealed samples of GaAs implanted with Si and Se to a dose ranging from 2.2 x 1012 to 6.0 x 10" cm'. The residual defects in the pulsed-laser annealed GaAs have been investigated by means of photo-induced current transient spectroscopy (PITS). The electron concentration and carrier mobility were studied by Hall effect and Van der Pauw measurements. Although the implanted layer recrystallization was good and the sheet carrier concentration was high, the electron mobility was low. The correlation between deep traps, the carrier concentration, the electron mobility, and laser light intensity is presented.

Paper Details

Date Published: 23 February 1990
PDF: 14 pages
Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963978
Show Author Affiliations
Mqhele E. Dlodlo, Kansas State University (United States)
Andrzej Rys, Kansas State University (United States)
Akhter U. Ahmed, Kansas State University (United States)
James H. Edgar, Kansas State University (United States)

Published in SPIE Proceedings Vol. 1190:
Laser/Optical Processing of Electronic Materials
Jagdish Narayan, Editor(s)

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