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Proceedings Paper

Resistless Microfabrication Of Cu Thin Films On N-Type GaAs By Projection Patterned Excimer Laser Doping
Author(s): Koji Sugioka; Koichi Toyoda
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Paper Abstract

Resistless microfabrication of Cu thin films on n-type GaAs by projection patterned laser doping using a KrF excimer laser and a SiH4 gas is described. Copper thin films with a linewidth as narrow as 2.35gm are deposited selectively on the doped region by electroplating in a CuSO4 aqueou solution. The resistivity of the deposited Cu films is evaluated to be 2.45x 10° S2cm, which is compared to that of bulk Cu. Using this technique, nonallpyed ohmic contacts can be formed with a specific contact resistance of 2.32x 10a S2 cm 4, which is one-thirtieth of that of the conventional alloyed contacts. The mechanism of Cu film deposition by electroplating is discussed.

Paper Details

Date Published: 23 February 1990
PDF: 8 pages
Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963977
Show Author Affiliations
Koji Sugioka, Riken Research Institute (Japan)
Koichi Toyoda, Riken Research Institute (Japan)

Published in SPIE Proceedings Vol. 1190:
Laser/Optical Processing of Electronic Materials
Jagdish Narayan, Editor(s)

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