The growth mechanism in photo-assisted metal organic vapor phase epitaxy of ZnSe on GAAs substrate using dimethylzinc and dimethylselenide has been investi-gated using Ar ion laser as an irradiation source. It has been found that following three parameters greatly affect the film growth: (1)hydrogen gas partial pressure, (2)Ar ion laser irradiation, and (3)thickness of the growing ZnSe layer itself. From the results obtained, it has been found that the absorption of photons by ZnSe layer and following formation of excess-holes near the surface are essential for the growth-rate enhancement in the photo-assisted MOVPE of ZnSe. A plausible growth mechanism utilizing a band diagram of ZnSe/GaAs junction in which excess-holes play an important role at the ZnSe surface has been proposed.

Date Published: 23 February 1990
PDF: 10 pages
Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963974

Published in SPIE Proceedings Vol. 1190:
Laser/Optical Processing of Electronic Materials
Jagdish Narayan, Editor(s)