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Proceedings Paper

Ultrathin Reoxidized Nitrided Oxide Prepared by Rapid Isothermal Processing for Advanced MOS Devices
Author(s): Takashi Hori; Hiroshi Iwasaki
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Paper Abstract

Deep-submicron MOSFET's require ultrathin (-.._ lOnm) gate dielectrics satisfying high performance and high reliability simultaneously. This paper proposes (reoxidized) nitrided oxides prepared by rapid isothermal processing (RIP) as a replacement of conventional gate-Si02 and investigates the physical properties, defect-charge densities, TDDB reliability, MOSFET performance, and hot-carrier reliability. In contrast with popularly heavy nitridations, light nitridation combined with the subsequent reoxidation improves reliability significantly, while achieving device performance comparable or superior to that of SiO2. An ultrathin (reoxidized) nitrided oxide prepared by RIP is most promising as the gate dielectric of deep-submicron MOSFET's in place of thermal SiO2.

Paper Details

Date Published: 6 April 1990
PDF: 10 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963969
Show Author Affiliations
Takashi Hori, Matsushita Electric Industrial Co., Ltd. (Japan)
Hiroshi Iwasaki, Matsushita Electric Industrial Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

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